晶體尺寸：10毫米電學性能：半導體，拓撲絕緣體，熱電性晶體結構：六邊形晶胞參數：a = b = 0.425nm，C = 3.048nm，α=β= 90#176;γ= 120晶體類型：合成晶體純度：＞99.995%表征方法：XRD、拉曼、EDX

晶體尺寸：10毫米
電學性能：半導體，拓撲絕緣體，熱電性
晶體結構：六邊形
晶胞參數：a = b = 0.425nm，C = 3.048nm，α=β= 90°γ= 120
晶體類型：合成
晶體純度：＞99.995%
表征方法：XRD、拉曼、EDX
 

X-ray diffraction on a Sb2Te3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 7 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24

Powder X-ray diffraction (XRD) of a single crystal Sb2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal Sb2Te3 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal Sb2Te3. Measurement was performed with a 785 nm Raman system at room temperature.